| 摘要 |
PURPOSE:To make it possible to polish the upper surface, without polishing, bonding and the like of the back surface of a substrate and to implement simplification of processes and uniform thickness of a film, by forming a film, which is thicker than the thickness of an epitaxially grown film, at the peripheral part of the substrate, on which the epitaxially grown film is formed, and using said thick film as a reference surface. CONSTITUTION:An epitaxial film 12 is grown on the surface of a substrate 11. A peripheral part 13 of the surface of the substrate is exposed. A mask 15 is used, and an evaporated layer 14 is formed. The height of the evaporated layer 14 must be higher than the height the epitaxially grown film 12. Since the evaporated layer 14 gives the reference height, the layer must have hardness, which is harder than the hardness of the epitaxially grown film 12 against polishing. The substrate 11 is bonded to a polishing jig 16 and made to face a polishing table 17. The polishing table 17 is turned and polished. Then, the uniform, epitaxial layer 12 having the uniform thickness without irregularities can be formed. |
