| 摘要 |
PURPOSE:To measure the grain size of crystal on the surface of a sample from the area determined by a line connecting two minimal points, inflection points, or nearby points depending upon the crystal grain size on the surface reflection spectrum curve of the sample and the spectrum curve, or the height of a perpendicular from a maximal point between them. CONSTITUTION:The surface reflection spectrum curve of Si single crystal when an ultraviolet spectral method is used corresponds to the size of a crystal grain normally between 235 and 330nm and indicates the crystal of poly-Si at a peak of 270-280nm and a minimal or inflection point appears almost between 235 and 330nm on both sides of the peak. The area surrounded with the line connecting said two points and spectrum curve or height of the perpendicular from the maximal point of the curve is information corresponding to the peak where the crystalline property of the Si crystal is obtained, and this is used to measure the size and crystalline property of a crystal grain. Further, a tangent drawn nearby the minimal point and inflection point can be utilized. The information is compared with prepared information to judge the size of the crystal grain.
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