发明名称 |
Gate turn-off thyristor |
摘要 |
In accordance with the present invention, a plurality of strip-shaped emitter layers on the cathode side are radially arranged on one main surface of the semiconductor substrate while forming a plurality of rings. A gate electrode is in ohmic contact with a part of a base layer which surrounds and is adjacent to each of said emitter layers on the cathode side. Between rings formed by said emitter layers on the cathode side, a ring-shaped gate collecting electrode is provided to be connected to said gate electrode. The gate collecting electrode is provided at a position to balance the potential differences produced by gate currents respectively corresponding to inside and outside of said gate collecting electrode.
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申请公布号 |
US4626888(A) |
申请公布日期 |
1986.12.02 |
申请号 |
US19830550586 |
申请日期 |
1983.11.10 |
申请人 |
HITACHI, LTD. |
发明人 |
NAGANO, TAKAHIRO;YATSUO, TSUTOMU;OIKAWA, SABURO;HORIE, AKIRA |
分类号 |
H01L29/423;H01L29/74;H01L29/744;(IPC1-7):H01L29/74;H01L23/48 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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