| 摘要 |
PURPOSE:To suppress blooming and to reduce after images at the time of low illuminance, by providing electrodes for controlling electric charge, which are ohmic-contacted with a light conductive film, in a shape wherein the end parts are embedded in an insulating film at a position corresponding to a gap between picture elements electrodes. CONSTITUTION:In one surface of a semiconductor substrate 1, a vertical CCD 2 and a charge accumulating diode 3 are formed at neighboring positions. An insulating film 5 is formed together with transfer electrodes 4 so that a part on the n<+> type region on the charge accumulating diode 3 is exposed. First electrodes 6 are separately formed on the semiconductor substrate 1 so that a part of each electrode is contacted with the charge accumulating part. An insulating layer 7 is formed on the first electrodes 6 and smoothed. Contact holes 11 are provided in the insulating layer 7. Second electrodes 9 are formed on the insulating layer 7 with a specified interval being provided. On the second electrodes 9 and exposed fourth electrodes 8, a light conducting film 12, a barrier layer 13 and a light transmitting third electrode 14 are sequentially formed. The fourth electrodes 8 are ohmic-contacted with the light conducting film 12. Thus the desired solid state image pick-up device is obtained. |
