发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To reduce the thermal stress of a target, to increase the film forming speed and to form a thin film having uniform thickness on a substrate by retaining density plasma generated by a microwave on the whole surface of the target with a magnet and controlling the density distribution of the plasma. CONSTITUTION:Magnets 3 and 16 constitute a mirror field and the lines magnetic of force 17 are dense at the center of the magnet 16, coarse at a plasma generating chamber 12 and dense at the center of the magnet 3. The lines magnetic of force 18 on the surface of the target 1 connected to the lines 17 are compacted in the vicinity of the target 1 by a magnetic body 4. A microwave from a microwave generator 15 is introduced into the chamber 12 to generate high-density plasma with the magnetostatic fields of the magnets 3 and 16, the whole surface of the target 1 is covered with the plasma by the diffusion of the plasma along the line of magnetic force 18, high density is kept at this place and the number of sputtered particles is increased. Consequently, a film can be formed at high speed without an increase in the thermal load on the target 1. Furthermore, plural magnets 3a and 3b are used to change the intensity distribution of the magnetic field and to control the density distribution of the plasma and a uniform thin film is obtained.
申请公布号 JPS61272372(A) 申请公布日期 1986.12.02
申请号 JP19850114039 申请日期 1985.05.29
申请人 HITACHI LTD 发明人 SUZUKI YASUMICHI;SAITO YUTAKA;SANO HIDEZO;SHIMIZU TAMOTSU;AIUCHI SUSUMU
分类号 C23C14/36;C23C14/35;H01L21/203;H01L21/285;H01L21/31 主分类号 C23C14/36
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