| 摘要 |
PURPOSE:To obtain multilayer wirings characterized by excellent efficiency in utilization of the area of a substrate and high freedom of design, by directly connecting the Nth wiring layer and the (N+2)th wiring layer without passing through the extra (N+1)th wiring layer. CONSTITUTION:A through hole is formed in an interlayer insulating film 104 by dry etching. A second wiring layer 105 and a connecting part 201, which connects a first wiring layer 103 and the second wiring layer 105, are formed by a sputtering method. An interlayer insulating film 202 is formed thereon by a CVD method. A stencil layer 203 is formed by depositing titanium on the interlayer insulating film 202 by sputter etching. A through hole for connecting the first wiring layer 103 and a third wiring 107 is formed in the layer 203 and the interlayer insulating films 103 and 202 by a dry etching method. A connecting metal film 204 for the first and third wiring layers is deposited thereon by an ionizing evaporation method. Slight etching is performed, and only the side surface part of the stencil layer 203 is exposed. Then the stencil layer 203 is lifted off, and only the connecting metal film 204 at the through hole part is made to remain. The third wiring layer 107 is deposited by the sputtering method and patterned. |
