| 摘要 |
PURPOSE:To make the quality of formed film of high density and of a value stoichiometrically close to an ideal structure by exciting sufficiently a nonproductive gas contributing to a reaction in a light source chamber, conducting it into a reaction space and allowing it to react with a produced gas. CONSTITUTION:A nonproductive gas (oxide) 28 contributing to a reaction is fed to a light source chamber 5 and decomposed or activated with the light irradiation and introduced into a reaction chamber 2 via a heating chamber 11. A gas 27 uncontributing to the reaction is mixed to the nonproductive gas 28 as necessary. A reactive gas such as nitride is fed to the reaction chamber 2 side through a nozzle 30 and conducted 31 to a reaction space 1'. The inside of the reaction chamber 2 is controlled in the pressure and a coated film such as silicon nitride is formed on a substrate 1. |
