| 摘要 |
PURPOSE:To obtain a stable in active layer, by implanting ions on the outside of a diffused layer region on the main surface side of a semiconductor substrate, so as to obtain amorphous material, thereafter forming a semi-insulating layer by implanting oxygen or nitrogen ions, and thereby making the concentration of the oxygen or nitrogen included in the amorphous layer uniform. CONSTITUTION:An opening part is formed on the outside of a P-type semiconductor region 12 and on the main surface side of a semiconductor substrate 11 by a photolithography process. A part of the semiconductor substrate 11 is exposed. Thereafter, e.g., Ar or Si ions are implanted at a high concentration, and an amorphous layer is formed. Thereafter, oxygen or nitrogen ions are implanted in the opening part, and the amorphous layer of a semi-insulating layer 13 is arranged. At this time, in addition to lattice defects caused by the ion implantation in the semiconductor substrate 11, an amorphous region is yielded. The amorphous region is recovered to a single crystal structure by annealing but is not recovered completely. Thus considerable amorphous region remains. Therefore, oxygen ions are implanted in the amorphous region, which is formed by the ion implantation. The post-treatment is performed at 500 deg.C or less, and a semi-insulating layer 13 is formed. Thus the semiconductor device having an inactive layer is completed. |
