发明名称 SPUTTERING TARGET
摘要 PURPOSE:To obtain a uniform vapor-deposited film by using a single crystal in the evaporating part of a sputtering target. CONSTITUTION:A metallic single crystal having a perfectly uniform structure is used in a target so as to always cause uniform evaporation from the surface of the target. By the uniform evaporation, a vapor-deposited film of a uniform thickness can be obtd. It is preferable that the target is formed by a known continuous casting method using a heated casting mold. When a metal is continuously cast into an ingot by the method, the surface of the inner wall of the casting mold is kept at a temp. above the solidification temp. of the metal and the cooling of the resulting ingot is carried out at the outside of the outlet end of the casting mold.
申请公布号 JPS61272371(A) 申请公布日期 1986.12.02
申请号 JP19850114333 申请日期 1985.05.29
申请人 O C C:KK 发明人 ONO ATSUMI
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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