| 摘要 |
PURPOSE:To enable a gas used for the heat treatment of wafers to be supplied into a furnace core tube in the perfect gaseous stage even if it has a high liquefying temperature and to realize stable formation of an oxide film and of a diffused region, by heating again the gas directly before it is supplied into the furnace core tube. CONSTITUTION:The inside of a treating apparatus is heated by a heater 13 to a predetermined temperature. After that, N2 or O2 gas is introduced into a furnace core tube 11 from a gas system through a piping 15, a connector 16 and a gas inlet tube 17 inserted into the furnace core tube 17. A boat charged with wafers 14 is then inserted into the furnace core tube 11. Water vapor produced by burning H2 and O2 in the gas system is introduced into the furnace core tube 11 through the piping 15, connector 16 and the gas inlet tube 17. The water vapor will never be liquefied within the gas inlet tube 17, because the gas inlet tube is located inside the heater 13 and the temperature thereof is maintained at a temperature used for the heat treatment. Even if the water vapor is nearly liquefied within the piping 15 or the connector 16, it is heated again by the heater 13 and returned to the perfect water vapor state within the gas inlet tube 17. |
