| 摘要 |
PURPOSE:To make it possible to prevent the yield of hillocks completely on the surface of a metal film, by doping second impurities, which have intense affinity with a first added element by ion implantation in a thin film, which includes the first added element in Al and Al alloy. CONSTITUTION:Diffused regions 1a and 1b, which are doped with reverse conducting type impurities, are formed in an Si substrate 1. On this substrate, a filled oxide film 2 comprising SiO2, a PSG film 3 and a first Al layer 4, which is the first layer of multilayer wirings, are formed. Ti is included in the Al layer 4 as impurities. As the imputies, which have intense affinity with Ti, e.g., B ions are implanted and doped in the Al layer 4 including the Ti. A desired pattern is formed by dry etching. Then, as an interlayer insulating layer, a second Al layer 6, which is the second layer in the multilayer wirings, is formed through a PSG film 5. At the uppermost part, a passivation layer 7 is provided. A gate oxide film 8 and a polysilicon gate electrode 9 are further provided. |
