| 摘要 |
PURPOSE:To prevent the occurrence of pattern defects in a first layer metal wiring film by over-etching, by applying a film such as resist after the formation of the first layer wiring film, and performing dry etching under the condition the selecting ratio of the film and a hillock becomes approximately 1:1. CONSTITUTION:When a first layer metal wiring film 33 is formed on a semiconductor substrate 31 and heat treatment for obtaining ohmic contact with the semiconductor substrate 31 is performed, a hillock 33a is formed. Then, e.g., a film 34 such as resist is coated to a specified thickness. Dry etching is performed under the condition the selecting ratio of the film 34 and the hillock 33a becomes approximately 1:1. When the surface of the first layer metal wiring film 33 begins to be exposed, that time is made to be finishing point of etching. Then, the residue of the film 34 is removed. Thus the hillock 33a is selectively etched with respect to the first layer metal wiring film 33. The etching is performed until the hillock becomes approximately flat with the first layer metal wiring film 33. |
