发明名称 |
Light beam applied to a layered semiconductor structure is controlled by another light beam |
摘要 |
A nonlinear optical device includes a layered semiconductor structure having layers of different energy band gap materials. Alternate layers of the structure are arranged for containing trapped charge. An input light beam is applied to the layers. A control light beam varies the trapped charge for controlling propagation of the input light beam through the structure.
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申请公布号 |
US4626075(A) |
申请公布日期 |
1986.12.02 |
申请号 |
US19850737571 |
申请日期 |
1985.05.23 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
CHEMLA, DANIEL S. |
分类号 |
G02F1/015;G02F1/29;(IPC1-7):G02F1/015;G02F1/19;G02F1/35 |
主分类号 |
G02F1/015 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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