| 摘要 |
<p>PURPOSE:To prevent an abnormal phenomenon from generating in the voltage- current characteristics of the P-N-P transistor Tr by a method wherein the region of the N<+> buried layer for the N-P-N transistor Tr is extended up to just under a part of the collector region of the P-N-P transistor Tr or up to just under the emitter region thereof. CONSTITUTION:The region of an N<+> buried layer 3a is extended up to just under a part of the collector region 9 of a P-N-P transistor Tr or up to just under the emitter region 8 thereof. By extending a region of the substrate, wherein an N<+> diffusion is performed before the epitaxial growth process, the region of the layer 3a can be extended to an arbitrary place. By forming the layer 3a in such a way, the collector-emitter voltage of the P-N-P Tr grows. In that case, the voltage reaches a breakdown voltage before the upper and lower depletion layers, which spread in an N<-> epitaxially grown layer 2, link together. As a result, an abnormal phenomenon ceases from generating in the VCE-Ic (collector-emitter voltage-collector current) characteristics of the P-N-P Tr.</p> |
