| 摘要 |
PURPOSE:To curve the interface of a solid phase and a liquid phase toward the outside of a crystal layer and to reduce the interface of a crystal particle in a crystal region by recrystallizing a silicon layer scanned to the projected direction of a curved shape after melting sequentially by a curved heater on the surface of the silicon layer on a substrate. CONSTITUTION:A crystal silicon layer 3 is formed of an SiO2 insulation film 2 on a silicon substrate 1. The substrate 1 on which the silicon layer 3 is formed is heated by the first strip heater 12 and is preheated to the extent that the silicon layer 3 is not melted. The curved belt type type second strip heater 113 is placed above the silicon layer 3 on the substrate 11 to be treated in such a way and the heater 113 is moved to the direction of an arrow (m) to the projected direction of the curved shape at a required speed. The silicon layer 3 is melted and recrystallized sequentially along the shape of the heater 113 and the curved interface of a solid phase and a liquid phase is formed outside the crystal. |
