| 摘要 |
PURPOSE:To stabilize the operation of highly integrated IC by a method wherein an insulating layer reaching a semiconductor substrate is provided between the first diffused region normally biased and the second diffused region zero or reversely biased blocking the mutual actions between these two diffuded regions. CONSTITUTION:An N-type epitaxial layer 20 is provided on a P-type Si substrate 21 while a P-type emitter layer 22 and an adjoining P-layer 24 are respectively diffused and then an insulating layer 29 reaching the substrate 21 is formed on the epitaxial layer 20 between respective P-N junctions 23 and 25. When the junction 23 is normally biased and the junction 25 is zero or reverse-biased, any minor carriers implanted from the junctions 23 are blocked by the insulating layer 29 not to reach the junction 25 because of the insulating layer 29 reaching the substrate 21. Therefore, the parasitic transistor effect between the junctions 23 and 25 can not be prevented. Besides, said effect can be improved by encir cling one side junction with the insulating layer 29. |
