| 摘要 |
PURPOSE:To contrive to bring the silicide layers, which are used as the masks for ion-implantation, into a low-resistance state and to reduce the wiring resistance by a method wherein the first and second heat treatments are both performed with the aim of crystallizing the silicide layers before and after the ion-implantation to be performed on the surface of the substrate. CONSTITUTION:A field insulating film 12 is formed on the surface of a P-type Si semiconductor substrate 10. Then, a gate insulating film 12A is formed on part of the surface of the substrate 10, which corresponds to the opening part of the film 12. After that, an MoSi2 film is deposited on the whole surface of the substrate 10, and a silicide layer 14 for gate electrode and a silicide layer 16 for wiring are formed by performing a patterning. Then, the layers 14 and 16 are crystallized from the amorphous state by performing the first heat treatment. Then, an N-type decision impurity is selectively ion-implanted in the surface of the substrate 10 using the silicide layers 14 and 16 as masks. By this implantation, the sheet resistivity of the MoSi2 film becomes considerably higher. Then, the silicide layers 14 and 16 are crystallized from the amorphous state by performing the second heat treatment. By this heat treatment, the resistances of the layers 14 and 16 are made lower than the original sheet resistivity of the MoSi2 film. As a result, the wiring resistance is reduced and a higher-speed operation of this device can be contrived. |
