| 摘要 |
PURPOSE:To prevent peeling of a film and occurrence of white plate defects by using as a pattern forming film a thin film composed essentially of one or more kinds of metal silicides selected from silicides of Ti, V, Zr, Nb, Hf, Ta, and W. CONSTITUTION:The thin film of the silicide of W, V, Nb, Ta, Zr, or Hf is formed on a high-purity synthesized quartz substrate by sputtering and partially by CVD to obtain a pattern forming film, thus permitting the obtained photomask to be superior in adhesion and prevented from film peeling, while plate detects, and the like. |
