MANUFACTURE OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To improve the removing effect of a naturally oxidized material on the surface of a substrate and to improve the junction of later formed a-Si and the substrate by exposing the substrate continuously in the plasma of an inert gas such as N2 gas or Ar after heated in a vacuum. CONSTITUTION:A substrate 1 for manufacturing a semiconductor element is heated at a temperature of 200 deg.C-400 deg.C in a vacuum. The heated substrate 1 is exposed in an exposing process in the plasma of an inert gas such as N2 gas or Ar. Then, an amorphous silicon a-Si 2 is formed on the substrate 1 and an Au electrode 3 is provided on the a-Si 2. The removing effect on a naturally oxidized material on the surface of the substrate 1 is improved, the contact between the later formed a-Si 2 and the substrate 1 is improved to require no heat treatment after the formation of the a-Si 2 and the deterioration of the characteristics of the a-Si 2 is prevented.