发明名称 MASK FOR FORMING PATTERN
摘要 <p>PURPOSE:To enable use of a photomask for a long period by forming a diamond-like carbon film as a surface protective layer. CONSTITUTION:After the photomask or an X-ray mask has been prepared, the diamond-like carbon film is formed on its surface by the CVD process including the plasma process and plasma injection process and the like, the ionization vapor deposition process, or the reactive ion sputtering process, or the like to obtain the surface protective layer, thus permitting the obtained carbon film to be high in hardness, chemically stable, and good in heat conductivity and electric characteristics, and this photomask to be used for a long period.</p>
申请公布号 JPS61270761(A) 申请公布日期 1986.12.01
申请号 JP19850113490 申请日期 1985.05.27
申请人 HITACHI METALS LTD 发明人 SAWADA RYOZO
分类号 G03F1/00;G03F1/22;G03F1/40;H01L21/027 主分类号 G03F1/00
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