| 摘要 |
PURPOSE:To obtain a high density integrated circuit device having flat surface low reduction of an element region by a method wherein an amorpous or polycrystalline semiconductor layer formed in a groove is single-crystallized by scanning an optial beam and the like using the aperture part of an insulating film as the starting point. CONSTITUTION:The region of the desired pattern located on a single crystal semiconductor substrate 1 is removed by etching, and after a groove structure has been formed, an insulating layer 2 is formed on the whole surface. Then, an aperture 3 reaching the surface of the substrate 1 is formed at the prescribed part of the insulating layer 2 located on the region other than the above-mentioned region by performing a photo etching and the like. Subsequently, an amorphous or polycrystalline semiconductor layer 4 is formed in deposition on the whole surface by performing a vapor-phase growing method and the like. Then, a laser beam 5 is made to irradiate and annealed on the layer 4 successively on to the other layer with the region corresponding to the aperture 3 of the insulating layer 2 as the starting point, and the above is single crystallized. Subsequently, a reactive ion etching is performed until the insulating film 2 is exposed, and an electrically isolated single crystal semiconductor 6 is obtained. |
