| 摘要 |
PURPOSE:To restrain a hillock from being made on an electrode and a wiring by a method wherein Al or Al alloy film is coated with polycrystalline or amorphous Si film to be ion implanted with B or B compound. CONSTITUTION:A P-type Si substrate 1 is divided by SiO2 and then a poly gate electrode 4 is provided on a gate oxide film 3 while an N-type source 5 and a drain 6 are formed. With overall surface covered with PSG7, an opening 8 is made and then an Al alloy film 10 containing Aacute angle or Cu etc. around 1mum thick is deposited on the PSG7 by sputtering process to be further coated with polycrystalline or amorphous Si film 11 not exceeding several scores of mum. The Si film 11 is ion implanted with B or BF5 to introduce B into the Al film 10 as necessary. Next an electrode 9 and a wiring are formed by patterning process. The Si diffusion into the P-type Al film 10 is remarkable to relieve the local steess placement on the Al film 10. The direct B introduction into the Al film 10 is also effective to restrain a hillock from being made. |
