| 摘要 |
PURPOSE:To attain high-speed read without malfunction and with simple constitution by driving a CMOS amplifier with two control signals having different timings. CONSTITUTION:The CMOS sense amplifier 2 is driven by a transistor (TR) N1 in response to a control signal phi1 to apply pre-sense and a potential difference in response to the storage content of the memory cell 1 in short time is generated between both bit lines. Then the pre-sensed potential difference is amplified via a TR N2 by using a control signal via a delay means 3, the potential difference is amplified, one bit line is brought into a power supply potential and the other goes to a common potential. Thus, a prescribed potential difference is generated in the bit line in short time and with simple constitution to speed up the read and since the potential decrease in the bit line at high level is small, the noise generated in a power supply voltage is reduced and malfunction due to the noise is prevented.
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