| 摘要 |
PURPOSE:To make possible the easy evaluation of a compd. semiconductor by using a soln. consisting of prescribed ratios of sulfuric acid: hydrogen perioxide water:water as the surface treating liquid for the compd. semiconductor. CONSTITUTION:The compd. semiconductor such as GaAs is immersed in the surface treating soln. consisting of the prescribed ratios of the sulfuric acid: hydrogen peroxide water:water so that the film corresponding to a lattice defect is formed. The easy evaluation of the crystallinity of the compd. semiconductor is thus made possible.
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