| 摘要 |
PURPOSE:To reduce the effect of the expansion and contraction of a wafer on a pattern image as much as possible while effectively utilizing energy from an X- ray source for the irradiation of a mask by contracting the area of the wafer to which a pattern is transferred by one-time baking. CONSTITUTION:A circuit pattern 20 and a pair of alignment marks 21 are formed on an X-ray transmitting substrate by an X-ray non-transmitting substance in a mask 16. X-rays are projected under the state in which one of four divided irradiating areas of a wafer 12 and the mask 16 are superposed. Alignment marks 24, 25, 26 are formed in each irradiating area at every one pair. The position of the wafer is adjusted so that an orientation flat section 27 in the wafer is directed in the predetermined direction, and the opposite surfaces of the mask 16 and the wafer 12 run parallel and the mask 16 and the wafer 12 are kept at a prescribed space. A rough and fine adjustment brings a mask holder onto a wafer holder on an irradiating base waiting at the position of pre-alignment, and stacks both the mask holder and the wafer holder. The irradiating base is moved to the adjacent position of fine alignment for more precise positioning. The wafer is transported into an irradiating chamber, and scanned and irradiated by X-rays. |
