SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To contrive the high velocity and the labor saving by reducing a word line load capacity by forming the first conductive layer to the depth in the middle of the groove formed on a main surface of the substrate of a semiconductor through an insulating film on the side plane of it and further forming the second conductor layer. CONSTITUTION:In the one-transistor type dynamic memory cell, a transfer transistor 2 and a groove capacitor 3 are arranged in series along the side plane of the groove formed almost vertically to a silicon substrate 1 and an isolation region 4 is arranged at the bottom of the groove. The first conductor 5 which functions as one electrode of a capacitor is formed through the insulating film 21 formed on the side plane of the groove. Also the second conductor layer 6 is formed in a predetermined region of the conductor 5, which functions as a gate electrode and a word line. On the region except this part, an insulating film is formed. Memory cells are located in the crossing region of bit lines 12 and the word lines 6 and a gate electrode 6 which is commonly used by two transfer transistors is limited to a region 13.