| 摘要 |
PURPOSE:To prevent a deviation of the current shunt ratio by making the current of the divided collectors a constant ratio in a P-type laser emitter and the plural P-type layer collectors formed by division on the N-type semiconductor substrate as a base. CONSTITUTION:To the base width WB2' which is determined by the breakdown voltage (BVCEO) between an emitter P<+> type layer 2 and one of collector P<+> type layer 3b, a collector P<+> type layer 3a is formed so that the apparent base widths become WB1'>WB2' on the manufacturing mask in consideration of the extension of a depletion layer 7. Though the base widths on the mask are WB1'>WB2', the depletion layer expanding widths are different according to a difference in the voltage applied to the collectors 3a and 3b and the effective base widths are WB1=WB2. As a result, hFE of the collectors 3a and 3b become the same and a deviation of the current shunt ratio can be prevented. |
