| 摘要 |
PURPOSE:To control the source-drain conduction resistance of an FET continuously with good reproducibility by providing a resistance means and limiting a tunnel current, and making variation in gate voltage with time. CONSTITUTION:A resistance line 9 is interposed between a gate electrode 6 and a tunnel electrode 8, so variation in the charging voltage of a capacitor means 16 becomes slower than a floating gate type FET having conventional digital specification with time. Consequently, the source-drain conduction resistance of the FET 13 is set and varied freely with a pulse voltage applied between input terminals 10 and 11. Further, the source-drain conduction resistance of the FET 13 is stored and held at a constant value even after the pulse voltage applied between the input terminals 10 and 11 is removed and this is usable for a part which should be highly reliable with a sense of security without providing any monitoring device for a power source.
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