发明名称 SEMICONDUCTOR CIRCUIT
摘要 <p>PURPOSE:To reduce power consumption and to improve write characteristic without reducing the capacity of a memory, by forming a switching means to a signal line by a series circuit of an FET. CONSTITUTION:A writing circuit 80 contains a controlling circuit 11 for generating a true complementary output of an address, based on an address Ai, and a switching means. The switching means is formed by connecting in series an E-P FET. For instance, the switch means which is connected to a word line W1 is formed by connecting alternately in series an E-P FET (Q1.1, Q3.1,...Q2n-1.1) to which true outputs of the address are inputted, and a D-P FET (Q2.1, Q4.1,...Q2n.1) to which complementary outputs -A1--An of the address are inputted. By such a switching means, this circuit is controlled so that only means is turned on in accordance with the address, and other all means are turned off.</p>
申请公布号 JPS61267997(A) 申请公布日期 1986.11.27
申请号 JP19850296931 申请日期 1985.12.27
申请人 NEC CORP 发明人 OBATA HIROYUKI
分类号 G11C17/00;G11C8/10;G11C16/06;G11C16/08 主分类号 G11C17/00
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