发明名称 METHOD OF FORMING RESISTOR FOR THICK-FILM CIRCUIT SUBSTRATE
摘要 PURPOSE:To reduce the quantity of trimming while improving quality by reheating a resistor in order to adjust a resistance value after a resistor baking process. CONSTITUTION:A protective film is formed through a resistor reheating process 14 and the resistance value of a resistor is measured, and a heating temperature and the time corresponding to the quantity of deviation with a design value of the resistance value are set and the resistor is reheated, thus adjusting the resistance value, then resulting in normal distribution in which the desired value of the center is closer to the design value. Accordingly, not only minus defective resistors are reduced but also the quantity of trimming working can also be minimized.
申请公布号 JPS61268051(A) 申请公布日期 1986.11.27
申请号 JP19850111434 申请日期 1985.05.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 GOTO MOTOYUKI;IKUTANI NORIO
分类号 H01L27/01;H05K1/16;(IPC1-7):H01L27/01 主分类号 H01L27/01
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