| 摘要 |
PURPOSE:To prevent the generation of a higher transverse mode by forming a window region transparent to laser beam generated in a thick active layer by cleaving a terrace section with a thin active layer and bringing the terrace section to a resonance surface. CONSTITUTION:An N-GaAs layer 6 is grown on a P-GaAs substrate 1 with a terrace section 9 and a groove section 10 until the surface of the layer 6 is flattened, and a groove section 10' is shaped where conforming to the groove section 10. A terrace section 9' is also formed simultaneously, and a channel section 11 is shaped onto the surface of the terrace section 9' and made to reach the substrate 1 extending over the terrace section 9' and the groove section 10'. The double-hetero structure of a P-GaAlAs clad layer 2, a GaAlAs active layer 3, an N-GaAlAs clad layer 4 and an N-GaAs cap layer 5 is formed. An N-type electrode 7 is shaped onto the cap layer 5 and a P-type electrode 8 onto the back of the substrate, and the central section of the terrace section is cloven to form a reflecting surface. Accordingly, a window section, a band end thereof does not absorb laser beams oscillated on the groove section 10' with the thick active layer, is shaped. |
