| 摘要 |
PURPOSE:To equalize temperature distribution in a quartz tube as much as possible at all times by preheating a material gas for a semiconductor at a required temperature before it is thermally oxidized and introduced into a diffusion furnace. CONSTITUTION:A gas introducing path 5a is arranged and formed so as to spirally surround the outer circumferential surface of a quartz tube 1 between the quartz tube 1 as a thermal oxidation and diffusion furnace and a gas introducing port 5, and a material gas for a semiconductor is introduced into the quartz tube 1 through the gas introducing path 5a from the gas introducing port 5. Consequently, the material gas for the semiconductor is preheated sufficiently during a time when it passes in the gas introducing path 5a, and elevated at a temperature approximately equal to the internal temperature of the quartz tube at a point of time when it is introduced into the quartz tube 1. Accordingly, possibility in which nonuniformity is generated in temperature distribution in the quartz tube 1 is eliminated. |
