| 摘要 |
PURPOSE:To form a steep hetero-junction interface by simultaneously mounting a first vacuum piping and a second vacuum piping and connecting a third vacuum piping, the inside thereof can be evacuated, to the first vacuum piping. CONSTITUTION:A vacuum piping 114 introducing organic-metal vapor and a vacuum piping 115 introducing a gas having the same component as a carrier gas are fitted simultaneously. The vacuum piping 115 capable of being evacuated is connected to the vacuum piping 114. A semiconductor thin-film having a first constituent element ratio is manufactured by the vacuum piping 114, the introduction of organic-metal vapor is interrupted while a section between the vacuum piping 115 and are reaction furnace 120 is opened, thus preventing the large variation of gas pressure in the reaction furnace. The vacuum piping 115 is opened, and the component of a residual gas among valves 111, 112 and 110 is evacuated. A valve 119 is closed, the valves 111-110 are opened, the flow rate of organic-metal vapor is stabilized, and valves 110, 118 are closed and a valve 117 is opened and the thin-film on a hetero-junction interface is grown continuously. |
