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发明名称
SCHOTTKY GATE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
摘要
申请公布号
EP0181091(A3)
申请公布日期
1986.11.26
申请号
EP19850307110
申请日期
1985.10.03
申请人
KABUSHIKI KAISHA TOSHIBA
发明人
TERADA, TOSHIYUKI C/O PATENT DIVISION K.K. TOSHIBA;HIROSE, MAYUMI C/O PATENT DIVISION K.K. TOSHIBA;ISHIDA, KENJI C/O PATENT DIVISION K.K. TOSHIBA
分类号
H01L21/338;H01L29/10;H01L29/812;(IPC1-7):H01L29/08;H01L29/80;H01L21/265
主分类号
H01L21/338
代理机构
代理人
主权项
地址
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