| 摘要 |
A process for the sintering of silicon carbide refractory or ceramic articles using plasma arc gases. In the process of the invention, a formed silicon carbide article is heated in a plasma fired furnace to a sintering temperature of between 2000 DEG C.-2500 DEG C. at a heating rate of 300 DEG C./hr-2000 DEG C./hr, and held at the sintering temperature for 0.1-2 hours. The enthalpy of the plasma gas is 2000 BTU/lb-4000 BTU/lb, when nitrogen is used as the plasma gas. The total cycle time for the process of the invention, including cooling and loading, is 1.5-20 hours. Silicon carbide articles, produced in accordance with the invention, have high strength, high density, high corrosion resistance and high dimensional stability. |
