| 摘要 |
<p>PURPOSE:To segment a wafer into semiconductor elements by a method wherein chemical etching is employed along a region in the wafer, along which segmentation is to be accomplished, for the provision of a groove sufficiently deeper than the electrically active layer and the region in the lower surface of the wafer positioned corresponding to the grooves in the upper surface is also provided with a groove that is formed by a dicing saw or the like. CONSTITUTION:A photosensitive resist 5 is applied to the upper surface of a semiconductor wafer 1. A slit is created when a resist 5 is partially removed by a photolithographic method from the region along which semiconductor elements 3a, 3b are to be separated from each other. A process follows wherein the upper surface of the semiconductor wafer 1 is subjected to chemical etching with the resist 5 with the slit serving as a mask. The groove 6 formed in the etching process must be sufficiently deeper than electrically active layer 2a, 2c. Next, the resist 5 is removed from the upper surface of the semiconductor wafer 1 and, in the lower surface of the semiconductor wafer 1, a groove 4 is provided by using a dicing saw or the like. The semiconductor elements 3a, 3b are separated from the semiconductor wafer 1 along the grooves 4, 6.</p> |
