| 摘要 |
<p>PURPOSE:To simplify stage and construction by forming successively a semicon ductor film, gate insulating film and gate electrode on an insulating substrate then implanting either of Sn<+> and n-type impurity element ions and In<+> to the semiconductor film and insulating substrate. CONSTITUTION:A polycrystalline Si film 2, the gate insulating film 3 consisting of SiO2 and the gate electrode 4 consisting of polycrystalline Si are formed on the glass substrate 1. Sn<+> and Sb<+> are successively implanted over the entire surface in this state by the energy penetrating through the polycrystalline Si film 2 and thereafter a heat treatment is executed to activate electrically the implanted impurities. An SiO2 film 8 is formed over the entire surface and after an aperture 8a is formed by etching away the prescribed part of the film 8, an electrode 9 consisting of A1 is formed through the aperture 8a. A liquid crystal 13 is sealed between the glass plate 12 on one surface of which a counter electrode 11 consisting of ITO is preliminarily formed and the Si3N4 film 10, by which the intended liquid display element is completed.</p> |
