发明名称 Decoder circuit for a semiconductor memory device.
摘要 <p>A decoder circuit of a semiconductor memory device includes a plurality of logic gates each constituted by a load transistor (Q&lt;Sub&gt;3&lt;/Sub&gt;) and drive transistors (Q&lt;Sub&gt;o&lt;/Sub&gt;, Q&lt;Sub&gt;i&lt;/Sub&gt;, Q&lt;Sub&gt;2&lt;/Sub&gt;) generating a line selection signal corresponding to input address signals (a&lt;Sub&gt;o&lt;/Sub&gt;, a&lt;Sub&gt;1&lt;/Sub&gt;, a&lt;Sub&gt;2&lt;/Sub&gt;), and a power source control circuit (11) for controlling the power source voltage (V&lt;Sub&gt;cc&lt;/Sub&gt;) supplied to the logic gates in accordance with a mode designation signal (0,0) which is a normal mode signal or an all selection mode signal.</p><p>When the all selection mode signal is input to the power source control circuit (11), the all selection mode state of the decoder circuit is obtained by pulling down the power source voltage (Vcc) supplied to the logic gates.</p>
申请公布号 EP0202910(A2) 申请公布日期 1986.11.26
申请号 EP19860303806 申请日期 1986.05.19
申请人 FUJITSU LIMITED 发明人 YOSHIDA, MASANOBU
分类号 H03M7/00;G11C8/10;G11C11/407;G11C11/413;G11C16/08 主分类号 H03M7/00
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