| 摘要 |
PURPOSE:To obtain a semiconductor device such as an avalanche photodiode with stable performance and excellent reproducibility of characteristics by a method wherein layers of a high impurity concentration region, a low impurity concentration region and a high impurity concentration region are successively distributed in one of semiconductor layers composing a P-N junction. CONSTITUTION:On an N<+> type InP substrate 11, an N<+> type InP layer 12, an N-type InGaAs layer 13, an N-type InGaAsP layer 14, an N-type InP layer 15, an N<-> type InP layer 16 and an N-type InP layer 17 are formed by an epitaxial growth method. An SiO2 (or SiNx) film is formed on the surface by a method such as CVD or sputtering and a P<+> type InP region 18 is formed by selective diffusion of Cd and then an SiNx (or SiO2) film 19, a positive type electrode 20 and a negative type electrode 21 are formed. A PNP junction can be obtained by impurity diffusion through the thin layer N-type region (the N-type InP layer 17) in an NN<->N structure. |
