| 摘要 |
PURPOSE:To remove the organic film to be formed on the surface of the substrate in a short time by a method wherein mixed gas of at least either of hexafluoroethane gas and trifluoromethane gas and oxygen gas is fed to the plasma-generating chamber. CONSTITUTION:A treating chamber 1 is blocked in the top of its cylindrical main body 2 with a quartz glass 3 and a thin external electrode 5 to be connected to a high-frequency oscillator 4 is fixed on the surface of the top of the quartz glass 3. Moreover, a placing stand 6 for a substrate W is airtightly fitted into the bottom part of the cylindrical main body 2, a thin internal electrode 7, whereon numerous small holes (a)... are formed, is provided in the interior of the cylindrical main body 2 and the interior of the cylindrical main body 2 is separated off by this internal electrode 7 into an upper plasma generating chamber S1 and a lower reaction-treating chamber S2. Moreover, the gas to be introduced in the plasma-generating chamber shall be mixed gas of at least either of hexafluoroethane gas, trifluoromethane gas and oxygen gas. By this constitution, the damage to be given to the substrate is lessened, and at the same time, the treating time can be reduced. |
