| 摘要 |
PURPOSE:To obtain a semiconductor memory device which is strong in software error due to the flowing in of alpha rays or the like and is not limited in the number of times of writing and erasure, by writing through the thermal trapping of the carriers in a quantum state, and reading through the detection of the caused change in the depletion layer capacitance. CONSTITUTION:A P<+> layer 2 is formed by doping boron into an Si substrate 1 which is doped with phosphorus, forming a P<+>N abrupt junction diode. After a nickel film 4 is formed on the reverse side of the substrate 1, heat treatment is applied, diffusing the nickel atoms into the substrate 1 and the P<+> layer 2. When the diode is cooled in the dark to the liquid N2 temperature and the bias voltage to the diode is made to be OV, the respective levels positioning at the energy side lower than Fermi level 8 are filled with electrons 10 and the respective other levels are filled with positive holes 11, corresponding to writing. With applying of the reverse bias voltage of 5V and heating, electrons are emitted from a nickel level 5, which is filled with the positive holes 11, corresponding to rewriting of the memory contents. The two memory states can be observed as the difference of the depletion layer capacitance. |
