| 摘要 |
PURPOSE:To lower a concentration of a part of the surface side of a contact layer and improve both of a mutual conductance and a gate dielectric strength by a method wherein Ga ions are implanted into the surface of a GaAs substrate by using the gate as a mask and silicon ions are implanted. CONSTITUTION:A photoresist film 2 is formed on a semi-insulating GaAs substrate 1 and silicon ions are implanted to form a channel layer 3 and a heat resistant metal layer, for instance a tungsten layer, is formed and a gate 4 is formed by an RIE method. Ga ions are implanted by a self-alignment method by utilizing the gate 4 and the resist film 2 to form a Ga-implanted layer 5. After the resist film 2 is removed, an insulation film 6 such as a silicon nitride film is applied and a photoresist film 7 which has apertures at the parts corresponding to source and drain parts is formed and silicon ions are implanted to form contact layers 8. After the resist film 7 is removed, the channel layer 3 and the contact layers 8 are activated by annealing to form an N-type conductive layer 9 and source and drain electrodes are formed to complete GaAs MESFET. |
