| 摘要 |
PURPOSE:To obtain the magnetic memory element of ultra-high density by a method wherein a photoresist pattern is baked at the temperature of the photoresist softening point or above, and a garnet is processed into saw-toothed form by performing an ion milling method. CONSTITUTION:A photoresist pattern 2 is formed on a garnet substrate 1, a resist is baked at the temperature of the resist-softening point or above, and then an ion milling is performed with argon-oxygen mixed gas. When the ion milling is continued further, the condition as shown in the diagram (d) is obtained. As a result, the saw tooth shape can be formed in an excellent controllability, and the magnetic garnet film 3 of good quality can be epitaxially grown in liquid phase. |
