Dry-processing apparatus

摘要

In a dry-processing apparatus adapted for vapor phase deposition or vapor phase etching, the processing space in its processing chamber is covered with a cooled member provided for trapping reflecting active particles and preventing degassing, thereby permitting processing with gas of high purity substantially free from impurities. The active particles are incident upon a workpiece in a unidirectional flow. Means for uniformalyzing the direction of movement of active particles may be further provided. The apparatus is especially useful for vertical etching of a semiconductor substrate with neutral radicals.