| 发明名称 |
Process for producing thin-film transistor |
| 摘要 |
A gate insulating film, a high-resistivity semiconductor film, a low-resistivity semiconductor film and if necessary a conducting film are successively deposited in lamination without exposing them to any oxidizing atmosphere including atmospheric air, and then the source and drain electrodes are selectively formed.
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| 申请公布号 |
US4624737(A) |
申请公布日期 |
1986.11.25 |
| 申请号 |
US19850743092 |
申请日期 |
1985.06.10 |
| 申请人 |
SEIKO INSTRUMENTS & ELECTRONICS LTD. |
发明人 |
SHIMBO, MASAFUMI |
| 分类号 |
H01L29/78;G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/45;H01L29/786;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C23F1/02 |
主分类号 |
H01L29/78 |
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