| 摘要 |
PURPOSE:To stabilize the oscillation wavelength of a semiconductor laser and to miniaturize the light source thereof by a method wherein the semiconductor laser is provided with a first electrode, which feeds driving current to the light-emitting part, a second electrode, which is adjacent to the light-emitting part independent of the first electrode and feeds current to enable heat to generate in the P-N junction part, and a third electrode, which leads out the junction voltage of the P-N junction part. CONSTITUTION:An exothermic part electrode 10 and a derecting part electrode 11 are both coupled thermally with a light-emitting part 9. When the exothermic part electrode 10 is conducted, heat is generated in the P-N junction (constituted of a clad layer 5 and an active layer 4) under the electrodes and the exothermic part electrode 10 acts as a heater for the light-emitting part 9, while the detecting part electrode 11 acts as a temperature sensor, which catches a temperature change in the P-N junction under the electrodes as a change in the terminal voltage, by passing low current of several mA or thereabouts thereto. As the width of a chip for a normal semiconductor laser is 100-300mum, the exothermic part electrode 10 and the detecting part electrode 11 can be made adjacent to the light-emitting part 9 50-100mum away. As a result, the thermal coupling thereof with the light-emitting part 9 is also good and the thermal time constants thereof can be also lessened. |
