| 摘要 |
PURPOSE:To prevent the attaching of polycrystalline GaAs particles to a region, which is not grown epitaxially, in the selective epitaxial growing of a GaAs layer by an MOCVD method, by performing the epitaxial growing only by a source gas beforehand, and thereafter continuously introducing HCl into the source gas. CONSTITUTION:On both surfaces of a gate electrode 3, which is provided on a semi-insulating GaAs substrate 1, side walls 4 comprising an insulating film are formed. Then unused parts of the epitaxially grown region are covered by an SiO2 film 5. Thereafter, selective epitaxial growing of GaAs is performed by an MOCVD method. As a source gas, TMGa and arsine (AsH3) are used. As a carrier gas, H2 is used. On the exposed part of the GaAs substrate 1, a GaAs layer 6a is formed by the selective epitaxial growing. On the gate electrode 3 and the SiO2 film 5, which are used as a mask, polycrystalline GaAs particles 7 are attached. In the source gas, 40-50% HCl is introduced, and the epitaxial growing is continuously performed for about 1min. Then, the polycrystalline GaAs particles 7 are completely etched away. |
