| 摘要 |
PURPOSE:To reduce the parasitic capacity of a semiconductor device and to improve switching speed, by constituting semiconductor regions directly beneath bonding pads as independent regions. CONSTITUTION:On an N-type epitaxial layer 22 on an N<+> type semiconductor substrate 21, a first P<+> type semiconductor layer 23a, a second P<+> type semiconductor layer 23b located around a cell assembly and a third P<+> type semiconductor layer 23c, which surrounds the layer 23b, are formed. A fourth P<+> type semiconductor layer 23d located directly beneath a bonding pad 29a and a fifth P<+> type semiconductor layer 23e located directly beneath a bonding pad 29b are formed in an independently isolated manner. Since the semiconductor layers 23d and 23e are isolated from the semiconductor layer 23b, the parasitic capacity between a source and a drain becomes extremely small, and the switching speed is strikingly improved. |
