发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To simplify processes and prevent excessive etching, by forming an opening on a fuse of a redundant circuit after the formation of an interlayer insulating layer, a wiring layer and a covering insulating layer. CONSTITUTION:An insulating layer 2 is formed on the entire surface of a substrate 1. A fuse 3 is formed thereon. After the formation of the pattern of the fuse 3, an interlayer insulating film layer 4 is formed on the entire surface. An Al layer 5, which is deposited on the interlayer insulating layer 4, is patterned, and an Al wiring 6 is formed. Thereafter, a covering insulation layer 7 is deposited and formed on the entire surface of the interlayer insulating layer 4 including the Al wiring 6. Then a photoresist 8 is applied on the entire surface of the insulation layer 7 over the fuse 3. Exposure is performed, and a specified region 9 is removed. With the photoresist 8, which is formed into a specified pattern, as a mask, the covering insulation layer 7 and the interlayer insulating layer 4 are etched. Through an opening part 10 formed by the etching, the fuse 3 is exposed to air. The wire cutting work of the wiring in the redundant circuit can be readily performed. The number of etching times is sufficient enough by once on the redundant circuit. Thus the processes can be simplified.
申请公布号 JPS61265830(A) 申请公布日期 1986.11.25
申请号 JP19850106949 申请日期 1985.05.21
申请人 SONY CORP 发明人 YAMAGISHI MACHIO
分类号 H01L21/3213;H01L21/82 主分类号 H01L21/3213
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