| 摘要 |
PURPOSE:To obtain a quasi-particle collector having lower leak current and in which a high transmittance and a high impedance can be realized simultaneously, by forming a base layer of a superconductor having a density of electrons lower than those of metals. CONSTITUTION:A superconducting device comprises a base layer 2 which is totally or partially formed of a superconductor having a density of electrons lower than those of ordinary metals (e.g. BaPb1-xBixO3), a means for implanting quasi-particles into the base layer 2 (e.g. an emitter layer 3 of Nb), and a collector for taking out quasi-particles from the base layer 2 (e.g. a semiconductor substrate 1 of InSb). The device having such construction can operate similarly as a bipolar transistor. Further, since the base layer 2 has a lower electron density than those of the metals, the leak current in the semiconductor substrate 1 serving as a collector is decreased and a high electron transmittance can be realized simultaneously with a high impedance. |
